8 inch 600um unpolished SiC wafer Supplier for Abrasives testing

8 inch 600um unpolished SiC wafer Supplier for Abrasives testing

Are you looking for the newest and biggest dimension of SiC wafer? HMT produces 200mm diameter 8 inch SiC raw cut wafer and double side polished SiC substrate for domestic and foreign customers. Conductive N type and semi-insulated SI type are both available in HMT. For 8 inch as-cut SiC wafer thickness is 600um, SiC substrate thickness is 500um. we also provide 2 inch 4 inch and 6 inch As-cut SiC wafer with competitive price on the market. 

SiC has wide band gap width, high breakdown electric field, high thermal conductivity and high electron saturation rate of physical properties, so that it has high temperature resistance, high pressure resistance, high frequency, high power, radiation resistance and other advantages, can reduce downstream product energy consumption, reduce terminal volume.  The band gap width of SiC is about 3.2eV, and the wide band width of silicon is 1.12eV, which is about 1/3 of the band gap width of SiC, indicating that SiC has significantly better high pressure resistance than silicon material.